RFP12N08L, rfp12n10l n-channel logic level power field-effect transistors (l2 fet) 12 a, 80v and 100v ros(on): 0.2 n features: ? design optimized tor 5 volt gate drive ? can be driven directly from q-mos, n-mos, ttl circuits ? compatible with automotive drive requirements ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? ma/ority carrier device n-channel enhancement mode the rfm12n08l and rfm12n10l and the RFP12N08L and rfp12n10l' are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. this performance is accomplished through a special gate oxide design which provides full rated con- duction at gate biases in the 3-5 volt range, thereby facilitat- ing true on-off power control directly from logic circuit supply voltages. the rfm-series types are supplied in the jedec to- 204aa steel package and the rfp-series types in the jedec to-220ab plastic package. because of space limitations branding (marking) on type RFP12N08L isfl2n08l and on typerfp12n10l is f12n10l. terminal designations rfm12n08l rfm12n10l jedec to-204aa RFP12N08L rfp12n10l drain _? (flange) o p source =!? i jeoec to-220ab maximum ratings, absolute-maximum values (7>25 c): drain-source voltage drain-gate voltage (r gate-source voltage drain current. rms continuous pulsed power dissipation @ ^=25 c derate above tc-t25 c operating and storage temperature t,, t. ,= 1 mo) .. ^25-c ... ? voss .. vow . . v rfm12n08l, rfm12n10l, RFP12N08L, rfp12n10l electrical characteristics, at case temperature (tc)=25c unless otherwise specified. characteristic drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse-transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junction-to-case symbol bvdds vos(th) loss less vds(on)' ros(on)" g?a cira c^ c_ won) t, td(off) t, rac test conditions id='i ma vgs=o vos'vos i0=1 ma vds'=65 v vos =80 v tc=125c vds:=65 v vds:=bo v vas=10 v vm*0 lo= 6 a vg5=5 v id=12a vm=5v id= 6 a vqs=5 v vds;=10v lo='6 a vos-25 v vgs=0 v f=1mhz vdo;=50 v id=6a f(il^= ro.=6,25 o vgs=5 v rfm12n08l, rfm12n10l RFP12N08L, rfp12n10l limits rfm12nml RFP12N08L min. 80 1 ? ? ? ? ? 4.0 ? ? ? i5(typ) 70(typ) .100(typ) 80(tygl ? ? max. ? 2 1 50 100 1.2 3.3 0.2 - 900 325 170 50 150 130 150 1.67 2.083 rfm12n10l rfp12n10l min. 100 1 ? ? ? ? ? 4.0 ? ? ? 15(typ) 70(typ) 100(typ) 80(typ) ? ? max ? 2 1 50 100 1.2 3.3 0.2 - 900 325 170 50 150 130 150 1.67 2083 units v v 1* na v n mho pf ns "c/w "pulsed: pulse duration = 300ps max., duty cycle - 2%. source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol vsd t,, test conditions lsd:--6 a if=4a dif/dt=looa/0s limits rfm12n08l RFP12N08L min. ? max. 1.4 150(typ) rfm12n10l , rfp12n10l min. ? max. 1.4 150(typ) units v ns ?pulse test: width < 3oofjs, duty cycle < 2%.
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